JPH0147016B2 - - Google Patents

Info

Publication number
JPH0147016B2
JPH0147016B2 JP59050004A JP5000484A JPH0147016B2 JP H0147016 B2 JPH0147016 B2 JP H0147016B2 JP 59050004 A JP59050004 A JP 59050004A JP 5000484 A JP5000484 A JP 5000484A JP H0147016 B2 JPH0147016 B2 JP H0147016B2
Authority
JP
Japan
Prior art keywords
film
conductivity type
region
gate electrode
dose
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59050004A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60193371A (ja
Inventor
Hiroshi Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59050004A priority Critical patent/JPS60193371A/ja
Publication of JPS60193371A publication Critical patent/JPS60193371A/ja
Publication of JPH0147016B2 publication Critical patent/JPH0147016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Drying Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59050004A 1984-03-15 1984-03-15 半導体装置の製造方法 Granted JPS60193371A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59050004A JPS60193371A (ja) 1984-03-15 1984-03-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59050004A JPS60193371A (ja) 1984-03-15 1984-03-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60193371A JPS60193371A (ja) 1985-10-01
JPH0147016B2 true JPH0147016B2 (en]) 1989-10-12

Family

ID=12846851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59050004A Granted JPS60193371A (ja) 1984-03-15 1984-03-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60193371A (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843023A (en) * 1985-09-25 1989-06-27 Hewlett-Packard Company Process for forming lightly-doped-drain (LDD) without extra masking steps
US4722909A (en) * 1985-09-26 1988-02-02 Motorola, Inc. Removable sidewall spacer for lightly doped drain formation using two mask levels
US4703551A (en) * 1986-01-24 1987-11-03 Ncr Corporation Process for forming LDD MOS/CMOS structures
JPS62190862A (ja) * 1986-02-18 1987-08-21 Matsushita Electronics Corp 相補型ｍｏｓ集積回路の製造方法
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions
JPS63252461A (ja) * 1987-04-09 1988-10-19 Nec Corp Ｃｍｏｓ型半導体装置の製造方法
JP2004014941A (ja) * 2002-06-10 2004-01-15 Nec Corp 半導体装置、これを用いた回路、および半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60193371A (ja) 1985-10-01

Similar Documents

Publication Publication Date Title
JP2774952B2 (ja) 半導体素子の製造方法
US4488351A (en) Method for manufacturing semiconductor device
US4753898A (en) LDD CMOS process
US5073512A (en) Method of manufacturing insulated gate field effect transistor having a high impurity density region beneath the channel region
US6087239A (en) Disposable spacer and method of forming and using same
US5994743A (en) Semiconductor device having different sidewall widths and different source/drain depths for NMOS & PMOS structures
US6008100A (en) Metal-oxide semiconductor field effect transistor device fabrication process
JPH08264789A (ja) 絶縁ゲート半導体装置および製造方法
JPH09102552A (ja) ドープされた二酸化シリコン膜からの拡散によるｐｍｏｓトランジスタの製造方法
JP3072754B2 (ja) 半導体装置の製造方法
JPH0147016B2 (en])
KR100265526B1 (ko) 반도체 장치의 제조방법
KR20050009482A (ko) 반도체 소자의 제조방법
JPH04258160A (ja) 半導体装置
JP3049496B2 (ja) Ｍｏｓｆｅｔの製造方法
JPH06349856A (ja) 薄膜トランジスタ及びその製造方法
JPH0552069B2 (en])
KR100415191B1 (ko) 비대칭형 씨모스 트랜지스터의 제조 방법
JPH03191529A (ja) 半導体装置の製造方法
JPH07115195A (ja) Ｍｏｓトランジスタ及びその製造方法
JPH09199717A (ja) 半導体装置の製造方法
KR100503743B1 (ko) 반도체 소자 제조 방법
JP3313300B2 (ja) サイドウォールスペーサの形成方法及び半導体装置の製造方法
JPH06244415A (ja) 半導体装置およびその製造方法
JPH0590574A (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term